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DATA SHEET
BAV19W~BAV21W
SURFACE MOUNT SWITCHING DIODES
VOLTAGE
FEATURES
* Fast switching speed. * Surface mount package Ideally Suited for Automatic insertion * Electrically Identical to Standard JEDEC * High Conductance * Pb free product are available : 99% Sn above can meet Rohs environment substance directive request
.008(.20)MAX .053(1.35) .037(0.95)
.016(.40)MIN .154(3.90) .141(3.60) .110(2.8) .098(2.5)
120-250 Volts
POWER
410mWatts
SOD-123
Unit: inch (mm)
MECHANICAL DATA
Case: SOD-123, Plastic
.005(.12)MAX
Terminals: Solderable per MIL-STD-202G, Method 208 Approx. Weight: 0.0104 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified. For capacitive load, derate current by 20%.
P A R A M E TE R M a rki g C o d e n R e ve rse V o l a g e t P e a k R e ve rse V o l a g e t R e ct f e d C urre nt (A ve ra g e ), H a l W a ve R e ct f ca t o n w i h ii f ii i t R e si t ve L o a d a nd f > = 5 0 H z si P e a k F o rw a rd S urg e C urre nt 1 . us ,0 P o w e r D i si a t o n D e ra t A b o ve 2 5 O C spi e M a xi um F o rw a rd V o l a g e a t 0 . A m t 1 M a xi um R e ve rse C urre nt a t T J= 2 5 O C m Typ i a l Junct o n C a p a ci a nce ( N o t s1 ) c i t e M a xi um R e ve rse R e co ve ry (N o t s2 ) m e M a xi um T he rm a l R e si t nce m sa O p e ra t ng Junct o n a nd S t ra g e Te m p e ra t re R a ng e i i o u VR V RM I O I SM F P TO T VF I R CJ TR R R JA TJ, TS TG 0. @ 100 1 S YM B O L B A V 19W A8 100 120 B A V 20W A 80 150 200 200 2. 5 410 1. 0 0. @ 150 1 5. 0 50 450 -5 5 t + 1 5 0 o
O
.028(0.7) .019(0.5)
B A V 21W A 82 200 250
.071(1.8) .055(1.4)
UNI S T
V V mA A mW V
0. @ 200 1
uA pF ns C /W
O
C
NOTE: 1. CJ at VR=0, f=1MHZ 2.From IF=10mA to IR=1mA, VR=6Volts, RL=100
STAD-NOV.17.2004
PAGE . 1
1000
100
TJ =25OC
100
I R , LEAKAGE CURRENT, uA
FORWARD CURRENT, mA
10
10
1.0
1.0
0.1
0.1
0.01
0
1.0
2.0
0.01
0
100
O
200
FORWARD VOLTAGE, VOLTS
T J , JUNCTION TEMPERATURE, C Fig.2 LEAKAGE CURRENT vs JUNCTION TEMPERATURE
FIG. 1-TYPICAL FORWARD CHARACTERISTIC
P D, POWER DISSIPATION (mW)
0 2 4 6 8
6.0
500
DIODE CAPACITANCE, pF
4.5
400
300
3.0
200
1.5
100
0
0
50
100
150
200
REVERSE VOLTAGE, VOLTS
AMBIENT TEMPERATURE( C) FIG. 4 POWER DERATING CURVE
O
FIG. 3 TYPICAL JUNCTION CAPACITANCE
STAD-NOV.17.2004
PAGE . 2
MOUNTING PAD LAYOUT
SOD-123
Unit: inch ( mm )
.0.059(1.50)
0.094(2.4)
0.059(1.50)
ORDER INFORMATION
* Packing information T/R - 10K per 13" plastic Reel T/R - 3.0K per 7" plastic Reel
LEGAL STATEMENT
IMPORTANT NOTICE This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in the application. The information will help the customer's technical experts determine that the device is compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and information herein are subject to change without notice. New products and improvements in products and product characterization are constantly in process. Therefore, the factory should be consulted for the most recent information and for any special characteristics not described or specified.
Copyright Pan Jit International Inc. 2003 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract. The information presented is believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
STAD-NOV.15.2004
PAGE . 3

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